OKINO TERUAKI (Total 212 Patents Found)

By causing a mask and a wafer to continuously move once or more and irradiating a plurality of small areas contained within a specific range of the mask in time sequence with a charged particle beam during each such continuous movement, the pattern in each small area is selectively projected onto a projection target ar...
Charged-particle-beam (CPB) exposure methods are disclosed that resolve the problem of aberrations produced by an image-adjustment lens and the problem of limitations in the speeds in which stage-correction mechanisms can be adjusted. Adjustments of stage-correction mechanisms and image-adjustment lenses are optimized ...
Methods and apparatus are disclosed for reducing thermal deformation of “upstream” marks (as used for alignment and/or calibration) situated on a reticle or on a reticle plane (e.g., on the reticle stage), thereby facilitating more accurate transfer of the reticle pattern to a sensitized substrate (e.g., semiconduc...
Methods are disclosed for transferring a pattern from a mask to a sensitive substrate. The mask is illuminated substantially orthogonally with a charged particle beam propagating along an optical axis. An image of the charged particle beam that has passed through the mask is projection-exposed onto the substrate. At mu...
Apparatus and methods are disclosed for performing highly precise mark detection by obtaining a large signal as a result of the efficient capture of secondary electrons (SEs) emitted from a surface of a specimen. A charged-particle beam is directed at a location (e.g., a mark) on the specimen (e.g., reticle or wafer). ...
Methods are disclosed for correcting proximity effects as affected by varying magnitudes of beam blur occurring at different respective locations in an image of a reticle subfield as projected onto the sensitive surface of a substrate. Local resizings of pattern-element profiles as defined on the reticle are made takin...
By causing a mask and a wafer to continuously move once or more and irradiating a plurality of small areas contained within a specific range of the mask in time sequence with a charged particle beam during each such continuous movement, the pattern in each small area is selectively projected onto a projection target ar...
Charged-particle-beam microlithography apparatus and methods are disclosed that achieve correction of positioning errors of one or both the reticle stage and wafer stage using a deflector. The deflector is situated in one or both lenses of the projection-optical system of the apparatus. The deflector preferably is elec...
Reticles and apparatus for performing charged-particle-beam microlithography, and associated methods, are disclosed, in which the pattern to be transferred to a sensitive substrate is divided according to any of various schemes serving to improve throughput and pattern-transfer accuracy. The methods and apparatus are e...
Charged-particle-beam (CPB) methods and apparatus are disclosed that achieve efficient correction of imaging distortions or astigmatisms (e.g., shape astigmatism) arising from differences in feature distributions within individual exposure units of a divided reticle defining a pattern for use in divided-pattern project...
(57)【要約】 【課題】 より高精度のパターン形成が可能な荷電粒子 ビーム露光方法等を提供する。 【解決手段】 ウエハ5をステージ21上に載置して移 動させながら、電子ビームに偏向を加えつつウエハ5上 の特定部にショット露光...
Apparatus and methods are disclosed pertaining to microlithography performed using a charged particle beam. In an exemplary apparatus, the projection-optical system includes a first projection lens situated downstream of a pattern-defining reticle and a second projection lens situated downstream of the first projection...
Microlithography reticles are disclosed that include a high-contrast reticle-identification code (bar code). The bar code is configured as a pattern (usually linearly arrayed) of high-scattering regions (bar-code elements) each exhibiting a relatively high degree of reflection-scattering of irradiated probe light. The ...
Methods are disclosed for reducing effects of thermal expansion of a sensitive substrate arising during microlithographic exposure of the substrate using a charged particle beam. Thermal expansion ordinarily causes lateral shift of exposure position of dies (chips) on the substrate which tends to reduce the positional ...
Apparatus and methods are disclosed for increasing the throughput of a charged-particle-beam exposure apparatus. The apparatus comprises an exposure-processing chamber in which exposure of individual sensitive substrates is performed using a charged-particle beam under preset vacuum and temperature conditions. A load-l...
Methods and apparatus are disclosed for reducing thermal deformation of “upstream” marks (as used for alignment and/or calibration) situated on a reticle or on a reticle plane (e.g., on the reticle stage), thereby facilitating more accurate transfer of the reticle pattern to a sensitized substrate (e.g., semiconduc...
A pattern transfer method in which a part or all of a plurality of small areas on a mask are sequentially irradiated with a charged particle beam to transfer an image of a pattern provided in each of the irradiated small areas onto a radiation-sensitive substrate, e.g., a wafer. A pattern distribution condition is eval...
Methods and apparatus are provided for performing charged-particle-beam microlithography at improved accuracy. A pattern is formed on a substrate (wafer) by repeated shot exposure of respective areas on a wafer substrate mounted on a wafer stage. Exposure of the wafer is made while the wafer stage is undergoing continu...
Charged-particle-beam pattern-transfer methods and apparatus are disclosed. Circuit patterns on a mask are divided into a plurality of fields, each field including respective connection ends. Fields that are to be adjacent as transferred to a substrate include a common portion of the circuit pattern in their respective...
Methods are disclosed for reducing distortions, differences in focal point-positions, and astigmatic blurring of a pattern defined on a reticle and projected onto a sensitive substrate using a charged particle beam. The methods reduce variations in the distribution of beam current as projected onto the substrate. To su...
(57)【要約】 【課題】 レチクルとウエハ間の電流密度分布の偏在に 起因する転写パターンの歪みや焦点位置の差、非点収差 ボケを小さくる。 【解決手段】 レチクル上のパターン11、15を通過 してパターン化された荷電粒子ビーム...
In order to make it possible to suppress projection errors in the portions of patterns which are connected together, in a method of pattern projection which includes a process of making a pattern of a beam of charged particle, in which a beam of charged particles is irradiated upon a small region upon a mask and the be...
In the context of charged-particle-beam (CPB) microlithography methods and systems, methods are disclosed for detecting the incidence orthogonality of a patterned beam on the lithographic substrate. In an embodiment, the position of reticle-fiducial-mark images, as formed on the substrate stage at a position Z 1, are ...
(57)【要約】 【課題】 正確なマーク検出ができ、露光精度を向上で きる荷電粒子ビーム露光方法等を提供する。 【解決手段】 電子線がマスク10上の位置検出用マー クに照射された際に、マーク走査用偏向器17を動作さ せ、該電子...